技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 10mA, 5A
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 5A, 2V
• Frequency - Transition 20MHz
• Supplier Device Package TO-3P
• Current - Collector (Ic) (Max) 10 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 2.5 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant