技术参数

• Package / Case TO-3P-3 Full Pack
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 3V @ 2.75A, 11A
• Current - Collector Cutoff (Max) 1mA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V
• Frequency - Transition 1.7MHz
• Supplier Device Package TO-3PBL
• Current - Collector (Ic) (Max) 20 A
• Voltage - Collector Emitter Breakdown (Max) 600 V
• Power - Max 200 W
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant