技术参数

• Package / Case TO-226-3, TO-92-3 Short Body (Formed Leads)
• Mounting Type Through Hole
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max) 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
• Supplier Device Package TO-92S
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 300 mW
• Frequency - Transition 250 MHz
• Resistor - Base (R1) 47 kOhms
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant