技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.6W
• Drain to Source Voltage (Vdss) 300V
• Current - Continuous Drain (Id) @ 25°C 340mA, 235mA
• Input Capacitance (Ciss) (Max) @ Vds 102pF @ 50V
• Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 6.24nC @ 10V
• Vgs(th) (Max) @ Id 2V @ 1mA
• Supplier Device Package 8-SO
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant