技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type PNP - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 500 mW
• Resistor - Base (R1) 2.2 kOhms
• Resistor - Emitter Base (R2) 2.2 kOhms
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant