技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Technology MOSFET (Metal Oxide)
• Power - Max 1W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 11.5A, 12A
• Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 15V
• Rds On (Max) @ Id, Vgs 11.4mOhm @ 11.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package Power56
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant