技术参数

• Package / Case TO-253-4, TO-253AA
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Gain 12dB
• Power - Max 200mW
• Current - Collector (Ic) (Max) 35mA
• Voltage - Collector Emitter Breakdown (Max) 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 6V
• Frequency - Transition 10GHz
• Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
• Supplier Device Package SOT-143
• ECCN EAR99
• HTSUS 8541.21.0075
• RoHS Status Not applicable