技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Power - Max 300mW
• Current - Collector (Ic) (Max) 25mA
• Voltage - Collector Emitter Breakdown (Max) 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce 67 @ 1mA, 10V
• Frequency - Transition 150MHz
• Supplier Device Package TO-92-3
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant