技术参数

• Package / Case 8-PowerTDFN, 5 Leads
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 9A (Ta), 44A (Tc)
• Rds On (Max) @ Id, Vgs 7mOhm @ 30A, 10V
• Power Dissipation (Max) 920mW (Ta), 21.6W (Tc)
• Vgs(th) (Max) @ Id 2.2V @ 250µA
• Supplier Device Package 5-DFN (5x6) (8-SOFL)
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 17.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1004 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant