技术参数

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Technology MOSFET (Metal Oxide)
• Power - Max 2W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 3A
• Input Capacitance (Ciss) (Max) @ Vds 160pF @ 10V
• Rds On (Max) @ Id, Vgs 69mOhm @ 1.5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Supplier Device Package 8-PSOP
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant