技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Power - Max 250mW
• Current - Collector (Ic) (Max) 20mA
• Voltage - Collector Emitter Breakdown (Max) 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V
• Frequency - Transition 600MHz
• Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz
• Supplier Device Package TO-92-3
• ECCN EAR99
• HTSUS 8541.21.0075
• RoHS Status ROHS3 Compliant