技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.5W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 7.5A, 8A
• Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V
• Rds On (Max) @ Id, Vgs 24mOhm @ 3.75A, 10V
• Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
• FET Feature Logic Level Gate, 4.5V Drive
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant