技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 900mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 10A
• Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 10V
• Rds On (Max) @ Id, Vgs 23mOhm @ 10A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package Power33
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant