技术参数

• Package / Case 8-PowerSOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 10A
• Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V
• Rds On (Max) @ Id, Vgs 12.5mOhm @ 5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
• FET Feature Logic Level Gate
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant