技术参数

• Package / Case EPM15
• Mounting Type Through Hole
• Configuration 2 N-Channel (Dual)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 75V
• Current - Continuous Drain (Id) @ 25°C 65A
• Input Capacitance (Ciss) (Max) @ Vds 6180pF @ 25V
• Rds On (Max) @ Id, Vgs 4.3mOhm @ 40A, 10V
• Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package EPM15
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant