技术参数

• Package / Case 6-UDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 1.4W (Ta)
• Vgs(th) (Max) @ Id 1.3V @ 250µA
• Supplier Device Package MicroFET 2x2 Thin
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant