技术参数

• Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 1mA, 6V
• Frequency - Transition 200MHz
• Supplier Device Package TO-92 (TO-226)
• Current - Collector (Ic) (Max) 150 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 500 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• RoHS Status ROHS3 Compliant