技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 59A (Tc)
• Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V
• Power Dissipation (Max) 189W (Tc)
• Vgs(th) (Max) @ Id 5.7V @ 11mA
• Supplier Device Package PG-TO247-4-3
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +23V, -5V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 2131 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant