技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Gain 14dB
• Power - Max 200mW
• Current - Collector (Ic) (Max) 80mA
• Voltage - Collector Emitter Breakdown (Max) 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 8V
• Frequency - Transition 6GHz
• Noise Figure (dB Typ @ f) 1dB @ 800MHz
• Supplier Device Package Mini3-G1
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)