技术参数

• Configuration 6 N-Channel (3-Phase Bridge)
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 55V
• Current - Continuous Drain (Id) @ 25°C 150A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 6970pF @ 25V
• Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
• Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant