技术参数

• Package / Case 4-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Ta)
• Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
• Power Dissipation (Max) 1.3W (Ta)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package 4-HVMDIP
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant