技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• FET Type N-Channel
• Voltage - Breakdown (V(BR)GSS) 35 V
• Supplier Device Package TO-92-3
• Power - Max 625 mW
• Resistance - RDS(On) 100 Ohms
• Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA
• Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected