技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Gain 20dB ~ 24dB
• Power - Max 250mW
• Current - Collector (Ic) (Max) 20mA
• Voltage - Collector Emitter Breakdown (Max) 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 10V
• Frequency - Transition 700MHz
• Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz
• Supplier Device Package TO-92-3
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected