- 产品型号 MT3S111TU,LF
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 RF SIGE NPN BIPOLAR TRANSISTOR N
- 分类 双极射频晶体管
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PDF
- 库存 11670
技术参数
- Package / Case 3-SMD, Flat Lead
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Gain 12.5dB
- Power - Max 800mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
- Frequency - Transition 10GHz
- Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
- Supplier Device Package UFM
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


