技术参数

• Package / Case 3-PowerDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Cascode Gallium Nitride FET)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 25A (Tc)
• Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
• Power Dissipation (Max) 96W (Tc)
• Vgs(th) (Max) @ Id 4.8V @ 700µA
• Supplier Device Package 3-PQFN (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)