技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3W (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 18A (Ta), 15A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V, 1250pF @ 15V
• Rds On (Max) @ Id, Vgs 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 25nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-HSOP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant