- Product Model PMV30UN,215
- Brand NXP Semiconductors
- RoHS Yes
- Description MOSFET N-CH 20V 5.7A TO236AB
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 1500
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
- Rds On (Max) @ Id, Vgs 36mOhm @ 2A, 4.5V
- Power Dissipation (Max) 1.9W (Tc)
- Vgs(th) (Max) @ Id 700mV @ 1mA (Typ)
- Supplier Device Package SOT-23 (TO-236AB)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 20 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


