• In Stock 0

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 40A (Tc)
  • Rds On (Max) @ Id, Vgs 125mOhm @ 28A, 20V
  • Power Dissipation (Max) 277W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 10mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +25V, -10V
  • Drain to Source Voltage (Vdss) 1700 V
  • Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 1000 V
  • California Prop 65 California Prop 65 Information
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • RoHS Status ROHS3 Compliant

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