- Product Model CTLDM303N-M832DS BK
- Brand Central Semiconductor
- RoHS No
- Description MOSFET 2N-CH 30V 3.6A TLM832DS
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 1500
Technical Details
- Package / Case 8-TDFN Exposed Pad
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1.65W
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
- Rds On (Max) @ Id, Vgs 40mOhm @ 1.8A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
- Vgs(th) (Max) @ Id 1.25V @ 250µA
- Supplier Device Package TLM832DS
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


