- Product Model IRF5850TR
- Brand IR (Infineon Technologies)
- RoHS No
- Description MOSFET 2P-CH 20V 2.2A 6TSOP
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 1500
Technical Details
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Mounting Type Surface Mount
- Configuration 2 P-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 960mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 2.2A
- Input Capacitance (Ciss) (Max) @ Vds 320pF @ 15V
- Rds On (Max) @ Id, Vgs 135mOhm @ 2.2A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1.2V @ 250µA
- Supplier Device Package 6-TSOP
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant


