- Product Model IRF5852
- Brand IR (Infineon Technologies)
- RoHS No
- Description MOSFET 2N-CH 20V 2.7A 6TSOP
- Categories Массивы полевых транзисторов, МОП-транзисторов
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PDF
- In Stock 1500
Technical Details
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Technology MOSFET (Metal Oxide)
- Power - Max 960mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 2.7A
- Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
- Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1.25V @ 250µA
- Supplier Device Package 6-TSOP
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant


