- Product Model HN3C10FUTE85LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description RF TRANS 2 NPN 12V 7GHZ US6
- Categories Биполярные радиочастотные транзисторы
- In Stock 1601
Technical Details
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Transistor Type 2 NPN (Dual)
- Gain 11.5dB
- Power - Max 200mW
- Current - Collector (Ic) (Max) 80mA
- Voltage - Collector Emitter Breakdown (Max) 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
- Frequency - Transition 7GHz
- Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
- Supplier Device Package US6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant
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