- Product Model HN1B01FU-GR,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description TRANS NPN/PNP 50V 0.15A US6-PLN
- Categories Биполярные транзисторные матрицы
- In Stock 4430
Technical Details
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP
- Operating Temperature 125°C (TJ)
- Power - Max 200mW, 210mW
- Current - Collector (Ic) (Max) 150mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
- Frequency - Transition 150MHz
- Supplier Device Package US6
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


