- Product Model SSM6N55NU,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET 2N-CH 30V 4A 6DFN
- Categories Массивы полевых транзисторов, МОП-транзисторов
- In Stock 3485
Technical Details
- Package / Case 6-WDFN Exposed Pad
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1W
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 4A
- Input Capacitance (Ciss) (Max) @ Vds 280pF @ 15V
- Rds On (Max) @ Id, Vgs 46mOhm @ 4A, 10V
- Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Supplier Device Package 6-µDFN (2x2)
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


