- Product Model NDC652P
- Brand Sanyo Semiconductor/onsemi
- RoHS No
- Description MOSFET P-CH 30V 2.4A SUPERSOT6
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 1500
Technical Details
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
- Rds On (Max) @ Id, Vgs 110mOhm @ 3.1A, 10V
- Power Dissipation (Max) 1.6W (Ta)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package SuperSOT™-6
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) -20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


