- Product Model SSM6L36FE,LM
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N/P-CH 20V 0.5A ES6
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 98566
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 150mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 500mA, 330mA
- Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V
- Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V
- Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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