- Product Model HT8KE6TB1
- Brand ROHM Semiconductor
- RoHS No
- Description MOSFET 2N-CH 100V 4.5A 8HSMT
- Categories Массивы полевых транзисторов, МОП-транзисторов
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PDF
- In Stock 5500
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2W (Ta), 14W (Tc)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 13A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 305pF @ 50V
- Rds On (Max) @ Id, Vgs 57mOhm @ 4.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSMT (3.2x3)
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


