- Product Model APTM120U10DAG
- Brand Microsemi Corporation
- RoHS No
- Description MOSFET N-CH 1200V 160A SP6
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 1500
Technical Details
- Package / Case SP6
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 160A (Tc)
- Rds On (Max) @ Id, Vgs 120mOhm @ 58A, 10V
- Power Dissipation (Max) 3290W (Tc)
- Vgs(th) (Max) @ Id 5V @ 20mA
- Supplier Device Package SP6
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 1100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 28900 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


