- Product Model FDP2614
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 200V 62A TO220-3
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 11022
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 62A (Tc)
- Rds On (Max) @ Id, Vgs 27mOhm @ 31A, 10V
- Power Dissipation (Max) 260W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


