- Product Model 2N65G
- Brand UMW
- RoHS Yes
- Description SOT-223 N-CHANNEL POWER MOSFETS
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 2453
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Tj)
- Rds On (Max) @ Id, Vgs 5.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 311 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


