Technical Details

• Package / Case 6-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.92W, 1.78W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 4A
• Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V
• Rds On (Max) @ Id, Vgs 68mOhm @ 4A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package MicroFET 3x3mm
• ECCN EAR99
• HTSUS 8542.39.0001