- Product Model SCTW90N65G2V
- Brand STMicroelectronics
- RoHS Yes
- Description SICFET N-CH 650V 90A HIP247
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 200°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V
- Power Dissipation (Max) 390W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package HiP247™
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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