- Product Model IRLI640GPBF
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 200V 9.9A TO220-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
Technical Details
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.9A (Tc)
- Rds On (Max) @ Id, Vgs 180mOhm @ 5.9A, 5V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


