- Product Model IPT111N20NFDATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 200V 96A 8HSOF
- Categories Single FETs, MOSFETs
-
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- In Stock 5718
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 96A (Tc)
- Rds On (Max) @ Id, Vgs 11.1mOhm @ 96A, 10V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 4V @ 267µA
- Supplier Device Package PG-HSOF-8-1
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


