- Product Model IPG20N10S4L35ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 2N-CH 100V 20A 8TDSON
- Categories FET, MOSFET Arrays
-
PDF
- In Stock 41012
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 43W
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 20A
- Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
- Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
- Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.1V @ 16µA
- Supplier Device Package PG-TDSON-8-4
- Grade Automotive
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET 2N-CH 100V 16A 8TDSON
In Stock: 15898
MOSFET 2N-CH 100V 16A 8TDSON
In Stock: 15519
MOSFET 2N-CH 55V 20A 8TDSON
In Stock: 28386
MOSFET 2N-CH 60V 20A 8TDSON
In Stock: 19061
MOSFET 2N-CH 100V 20A 8TDSON
In Stock: 8197
MOSFET 2N-CH 100V 20A 8TDSON
In Stock: 4595
MOSFET 2N-CH 100V 34A PPAK SO8
In Stock: 10475
MOSFET 2N-CH 80V 30A PPAK SO8
In Stock: 5357
MOSFET 2N-CH 100V 20A POWERFLAT
In Stock: 4367
