- Product Model STW65N65DM2AG
- Brand STMicroelectronics
- RoHS Yes
- Description MOSFET N-CH 650V 60A TO247
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1773
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V
- Power Dissipation (Max) 446W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-247-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 100 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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