• Product Model EPC2110ENGRT
  • Brand EPC
  • RoHS Yes
  • Description GANFET 2N-CH 120V 3.4A DIE
  • Categories FET, MOSFET Arrays
  • PDF PDF PDF PDF
  • In Stock 1500

Technical Details

  • Package / Case Die
  • Mounting Type Surface Mount
  • Configuration 2 N-Channel (Dual) Common Source
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Technology GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss) 120V
  • Current - Continuous Drain (Id) @ 25°C 3.4A
  • Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
  • Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
  • Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
  • Vgs(th) (Max) @ Id 2.5V @ 700µA
  • Supplier Device Package Die
  • ECCN EAR99
  • HTSUS 8541.21.0040
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant
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