- Product Model EPC8002
- Brand EPC
- RoHS Yes
- Description GANFET N-CH 65V 2A DIE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 54237
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Rds On (Max) @ Id, Vgs 530mOhm @ 500mA, 5V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 65 V
- Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 32.5 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
GANFET N-CH 100V 1.7A DIE
In Stock: 29763
GANFET N-CH 100V 16A DIE
In Stock: 36835
TRANS GAN BUMPED DIE
In Stock: 14147
GANFET 3 N-CH 100V 9BGA
In Stock: 6902
TRANS GAN 80V .006OHM AECQ101
In Stock: 27481
GANFET N-CH 40V 4A DIE
In Stock: 10091
GANFET N-CH 65V 4A DIE
In Stock: 11293
