- Product Model R8005ANX
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET N-CH 800V 5A TO220FM
- Categories Single FETs, MOSFETs
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- In Stock 1835
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Rds On (Max) @ Id, Vgs 2.08Ohm @ 2.5A, 10V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Supplier Device Package TO-220FM
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


