Technical Details

• Package / Case M112
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 5.6dB
• Power - Max 1350W
• Current - Collector (Ic) (Max) 40A
• Voltage - Collector Emitter Breakdown (Max) 65V
• DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 250mA, 5V
• Frequency - Transition 1.025GHz ~ 1.15GHz
• Supplier Device Package M112
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected